Role of annealing temperature in the oxide charge distribution in high- $$\kappa $$ κ -based MOS devices: simulation and experiment
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Published in | Journal of computational electronics Vol. 15; no. 3; pp. 795 - 800 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
01.09.2016
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Online Access | Get full text |
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ISSN: | 1569-8025 1572-8137 |
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DOI: | 10.1007/s10825-016-0829-y |