Study of structural defects in ZnGeP 2 crystals by X-ray topography based on the Borrmann effect

The first study of structural defects in a ZnGeP 2 semiconducting nonlinear optical crystal has been carried out by X-ray topography, based on the Borrmann effect, and the effect of anomalous transmission of X-rays on ZnGeP 2 crystals has been examined. It is shown that the rosette technique of defe...

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Published inJournal of applied crystallography Vol. 42; no. 6; pp. 994 - 998
Main Authors Okunev, A. O., Verozubova, G. A., Trukhanov, E. M., Dzjuba, I. V., Galtier, P. R. J., Said Hassani, S. A.
Format Journal Article
LanguageEnglish
Published 01.12.2009
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Summary:The first study of structural defects in a ZnGeP 2 semiconducting nonlinear optical crystal has been carried out by X-ray topography, based on the Borrmann effect, and the effect of anomalous transmission of X-rays on ZnGeP 2 crystals has been examined. It is shown that the rosette technique of defect study under conditions of the Borrmann effect, developed earlier for elementary semiconductors, can be applied to the study and identification of defects in ZnGeP 2 . Features of contrast from individual edge and screw dislocations, microdefects, and coherent and semi-coherent microinclusions were considered. Defect identification was carried out by comparison of the experimental intensity contrast with simulated images of the defects.
ISSN:0021-8898
DOI:10.1107/S0021889809037777