Defect annihilation-mediated enhanced activation energy of GaAs 0.979 N 0.021 -capped InAs/GaAs quantum dots by H − ion implantation

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Bibliographic Details
Published in	Thin solid films Vol. 639; pp. 73 - 77
Main Authors	Biswas, Mahitosh, Singh, Sandeep, Balgarkashi, Akshay, Makkar, Roshan L., Bhatnagar, Anuj, Subrahmanyam, N.B.V., Gupta, Shrikrishna K., Bhagwat, Pramod, Chakrabarti, Subhananda
Format	Journal Article
Language	English
Published	01.10.2017
Online Access	Get full text

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ISSN:	0040-6090
DOI:	10.1016/j.tsf.2017.08.026