Strain effect on proton-memristive NdNiO 3 thin film devices

Abstract We investigate resistance switching in proton-memristive NdNiO 3 film devices via the diffusional migration of a proton dopant by using electric field control. Lattice strain is found to play a significant role in determining proton migration within NdNiO 3 thin film. Compressive strain can...

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Bibliographic Details
Published inApplied physics express Vol. 16; no. 1; p. 14001
Main Authors Sidik, Umar, Hattori, Azusa N., Li, Hao-Bo, Nonaka, Shin, Osaka, Ai I., Tanaka, Hidekazu
Format Journal Article
LanguageEnglish
Published 01.01.2023
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Summary:Abstract We investigate resistance switching in proton-memristive NdNiO 3 film devices via the diffusional migration of a proton dopant by using electric field control. Lattice strain is found to play a significant role in determining proton migration within NdNiO 3 thin film. Compressive strain can accelerate the migration, resulting in a switching efficiency of 28.22% which is significantly higher than 0.21% on a tensile-strained device. The results demonstrate the significance of strain engineering and will guide the development of the design of multifunctional perovskite devices for emerging iontronics memory and computing applications.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/acae53