75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
The fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (R/sub bi/) of 17 k Omega / Square Operator , and an emitter width of 0.9 mu m is discussed....
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| Published in | IEEE electron device letters Vol. 11; no. 4; pp. 171 - 173 |
|---|---|
| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
IEEE
01.04.1990
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (R/sub bi/) of 17 k Omega / Square Operator , and an emitter width of 0.9 mu m is discussed. This performance level, which represents an increase by almost a factor of 2 in the speed of a Si bipolar transistor, was achieved in a poly-emitter bipolar process by using SiGe for the base material. The germanium was graded in the 45-nm base to create a drift field of approximately 20 kV/cm, resulting in an intrinsic transit time of only 1.9 ps.< > |
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| AbstractList | The fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (R/sub bi/) of 17 k Omega / Square Operator , and an emitter width of 0.9 mu m is discussed. This performance level, which represents an increase by almost a factor of 2 in the speed of a Si bipolar transistor, was achieved in a poly-emitter bipolar process by using SiGe for the base material. The germanium was graded in the 45-nm base to create a drift field of approximately 20 kV/cm, resulting in an intrinsic transit time of only 1.9 ps.< > |
| Author | Sun, J.Y.-C. Patton, G.L. Stork, J.M.C. Crabbe, E.F. Scilla, G.J. Harame, D.L. Comfort, J.H. Meyerson, B.S. de Fresart, E. Burghartz, J.N. |
| Author_xml | – sequence: 1 givenname: G.L. surname: Patton fullname: Patton, G.L. organization: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA – sequence: 2 givenname: J.H. surname: Comfort fullname: Comfort, J.H. organization: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA – sequence: 3 givenname: B.S. surname: Meyerson fullname: Meyerson, B.S. organization: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA – sequence: 4 givenname: E.F. surname: Crabbe fullname: Crabbe, E.F. organization: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA – sequence: 5 givenname: G.J. surname: Scilla fullname: Scilla, G.J. organization: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA – sequence: 6 givenname: E. surname: de Fresart fullname: de Fresart, E. organization: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA – sequence: 7 givenname: J.M.C. surname: Stork fullname: Stork, J.M.C. organization: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA – sequence: 8 givenname: J.Y.-C. surname: Sun fullname: Sun, J.Y.-C. organization: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA – sequence: 9 givenname: D.L. surname: Harame fullname: Harame, D.L. organization: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA – sequence: 10 givenname: J.N. surname: Burghartz fullname: Burghartz, J.N. organization: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA |
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| Snippet | The fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base... |
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| SubjectTerms | Boron Calibration Cutoff frequency Electrical resistance measurement Electrons Fabrication Germanium silicon alloys Heterojunction bipolar transistors Photonic band gap Silicon germanium |
| Title | 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors |
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