75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

The fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (R/sub bi/) of 17 k Omega / Square Operator , and an emitter width of 0.9 mu m is discussed....

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Bibliographic Details
Published inIEEE electron device letters Vol. 11; no. 4; pp. 171 - 173
Main Authors Patton, G.L., Comfort, J.H., Meyerson, B.S., Crabbe, E.F., Scilla, G.J., de Fresart, E., Stork, J.M.C., Sun, J.Y.-C., Harame, D.L., Burghartz, J.N.
Format Journal Article
LanguageEnglish
Published IEEE 01.04.1990
Subjects
Boron
Calibration
Cutoff frequency
Electrical resistance measurement
Electrons
Fabrication
Germanium silicon alloys
Heterojunction bipolar transistors
Photonic band gap
Silicon germanium
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Summary:The fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (f/sub T/) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (R/sub bi/) of 17 k Omega / Square Operator , and an emitter width of 0.9 mu m is discussed. This performance level, which represents an increase by almost a factor of 2 in the speed of a Si bipolar transistor, was achieved in a poly-emitter bipolar process by using SiGe for the base material. The germanium was graded in the 45-nm base to create a drift field of approximately 20 kV/cm, resulting in an intrinsic transit time of only 1.9 ps.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.61782