Demonstration of β-Ga 2 O 3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm 2 or a 5A/700 V Handling Capabilities
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Published in | IEEE transactions on power electronics Vol. 36; no. 6; pp. 6179 - 6182 |
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Main Authors | , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.06.2021
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Online Access | Get full text |
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ISSN: | 0885-8993 1941-0107 |
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DOI: | 10.1109/TPEL.2020.3036442 |