Reduction of p/sup +/-n/sup +/ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors

The authors report a three-order-of-magnitude reduction in parasitic tunneling current at heavily doped p/sup +/-n/sup +/ Si/Si and SiGe/Si junctions grown by rapid thermal epitaxial chemical vapor deposition (CVD) compared with previously reported results in Si junctions fabricated by ion implantat...

Full description

Saved in:
Bibliographic Details
Published inIEEE electron device letters Vol. 12; no. 4; pp. 163 - 165
Main Authors Matutinovic-Krstelj, Z., Prinz, E.J., Schwartz, P.V., Sturm, J.C.
Format Journal Article
LanguageEnglish
Published IEEE 01.04.1991
Subjects
Bipolar transistors
Chemical vapor deposition
Doping
Germanium silicon alloys
Heterojunction bipolar transistors
Ion implantation
Silicon germanium
Temperature
Tunneling
Voltage
Online AccessGet full text

Cover

More Information
Summary:The authors report a three-order-of-magnitude reduction in parasitic tunneling current at heavily doped p/sup +/-n/sup +/ Si/Si and SiGe/Si junctions grown by rapid thermal epitaxial chemical vapor deposition (CVD) compared with previously reported results in Si junctions fabricated by ion implantation. These results demonstrate the high quality of the epitaxial interface. The low tunneling currents allow higher limits to transistor base and emitter doping levels, yielding higher gains, reduced bias resistances, and higher Early voltages for scaled bipolar devices as well as Si/SiGe/Si heterojunction bipolar transistors.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.75751