High quality GaN crystal grown by hydride vapor-phase epitaxy on SCAAT TM

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Bibliographic Details
Published inApplied physics express Vol. 13; no. 8; p. 85508
Main Authors Iso, Kenji, Ikeda, Hirotaka, Mochizuki, Tae, Mikawa, Yutaka, Izumisawa, Satoru
Format Journal Article
LanguageEnglish
Published 01.08.2020
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ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/aba321