Study on the Transformation of Si Trench Profile With Low Pressure of SF₆/O₂ Containing Plasmas

• Published in: IEEE transactions on semiconductor manufacturing Vol. 35; no. 4; pp. 605 - 609
• Main Authors: Zhang, Wenwen, Huang, Renrui
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.11.2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Deep trench; Etching; Low pressure; Morphology; Plasmas; Power supplies; Production; Resists; Selectivity; SF₆/O; Si undercut; Silicon; Thickness

The reason for the change of trench sidewall profile under low pressure of SF6/O2 containing plasma was explored by studying the trench morphology under different etching conditions. The result shows that the Si undercut decreases with the decreasing of pressure and the uniformity will become better...