Study on the Transformation of Si Trench Profile With Low Pressure of SF₆/O₂ Containing Plasmas

• Published in: IEEE transactions on semiconductor manufacturing Vol. 35; no. 4; pp. 605 - 609
• Main Authors: Zhang, Wenwen, Huang, Renrui
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.11.2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Deep trench; Etching; Low pressure; Morphology; Plasmas; Power supplies; Production; Resists; Selectivity; SF₆/O; Si undercut; Silicon; Thickness
• ISSN: 0894-6507; 1558-2345
• DOI: 10.1109/TSM.2022.3195070

The reason for the change of trench sidewall profile under low pressure of SF6/O2 containing plasma was explored by studying the trench morphology under different etching conditions. The result shows that the Si undercut decreases with the decreasing of pressure and the uniformity will become better. However, the sidewall of the trench presents a negatively tapered under low pressure. The reasons for different profile of trench are explored by the thickness of sidewall protective layer for the first time. The TEM results show that the trench sidewall forms a protective film with a thickness of about 100Å. The thickness of the oxide layer decreases from top to bottom. And the EDX results show that the main elements of the protective film are Si and O. Due to the decrease of oxide thickness, the width of trench bottom will become larger and larger, resulting in negatively tapered morphology. It is worth noting that the profile of trench changes to positively tapered again under the condition of low ratio of SF6/O2. Based on this, an optimized trench etching process is proposed and the etch rate is <inline-formula> <tex-math notation="LaTeX">1.15{\mu }\text{m} </tex-math></inline-formula>/min and the selectivity to the oxide mask is 14.