Heteroleptic Titanium Complexes Bearing Amidoxime Ligands As Precursors for TiN Thin Films ALD

• Published in: Meeting abstracts (Electrochemical Society) Vol. MA2023-01; no. 29; p. 1794
• Main Authors: Lee, GA Yeon, Eom, Taeyong, Chung, Taek-Mo
• Format: Journal Article
• Language: English
• Published: The Electrochemical Society, Inc 28.08.2023
• ISSN: 2151-2043; 2151-2035
• DOI: 10.1149/MA2023-01291794mtgabs

This presentation reports the synthesis of three novel titanium complexes containing amidoxime ligands as potential precursors for titanium nitride (TiN) thin films fabricated using atomic layer deposition (ALD). A series of ligands, viz ., N' -methoxy- N -methylacetimidamide (mnnoH), N' -ethoxy- N -methylacetimidamide (ennoH), and N' -methoxy- N -methylbenzimidamide (pnnoH), were successfully synthesized and used to produce Ti(mnno)(NMe 2 ) 3 ( 4 ), Ti(enno)(NMe 2 ) 3 ( 5 ), and Ti(pnno)(NMe 2 ) 3 ( 6 ). Thermogravimetric analysis curves of complexes 4 – 6 revealed a single-step weight loss up to 200 °C. Pyrolysis occurred beyond 200 °C. Among the three new complexes, 5 was liquid at room temperature. Therefore, an ALD process for the growth of TiN was developed using Ti(enno)(NMe 2 ) 3 ( 5 ) as a novel precursor. A TiN thin film was deposited from the Ti(enno)(NMe 2 ) 3 ( 5) precursor and NH 3 plasma, and self-limiting growth was achieved by varying the injection/purge duration. TiN thin film growths were observed with a growth per cycle (GPC) of 0.03–0.075 nm∙cy -1 at deposition temperatures between 150 and 300 °C, while the measured resistivity was as low as 250 μΩ·cm. The high reactivity of the precursor promotes nucleation, resulting in TiN thin films with smooth, good step coverage, and preferentially orientated microstructure.