Quantitative analysis of trap states through the behavior of the sulfur ions in MoS 2 FETs following high vacuum annealing

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Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 51; no. 10; p. 105102
Main Authors Bae, Hagyoul, Jun, Sungwoo, Kim, Choong-Ki, Ju, Byeong-Kwon, Choi, Yang-Kyu
Format Journal Article
LanguageEnglish
Published 14.03.2018
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ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aaa9c9