An A 0 mode Lamb-wave AlN resonator on SOI substrate with vertically arranged double-electrodes

• Published in: Journal of micromechanics and microengineering Vol. 32; no. 9; p. 95004
• Main Authors: Cao, Haichao, Lu, Xianzheng, Ren, Hao
• Format: Journal Article
• Language: English
• Published: 01.09.2022
• ISSN: 0960-1317; 1361-6439
• DOI: 10.1088/1361-6439/ac82d9

Abstract In this paper, a novel vertically arranged double-electrodes A 0 mode Lamb-wave AlN resonator on SOI substrate with a high electromechanical coupling coefficient and high figure of merit (FOM) is reported. The AlN resonator has a sandwich structure with aluminum and N-type doped silicon as electrode layers and a 500 nm thick AlN film as piezoelectric layer. The resonator has only two electrodes vertically arranged rather than horizontal interdigitated (IDT) electrodes which is common in conventional Lamb-wave resonators. The electrode gaps for the vertically arranged double-electrodes resonators are defined by AlN layer thickness rather than by photolithography for lateral field excitation resonators, which results in higher electric field strength and higher electromechanical coupling efficient ( k t 2 ). Compared with conventional thickness field excitation (TFE) resonators with floating bottom electrodes, the vertically arranged double-electrodes resonators have higher electric field strength as the potential difference is larger between the top electrode and bottom electrode than that between the IDT electrodes and floating electrode. As a result, a higher electromechanical coupling coefficient is achieved. Furthermore, the resonant frequency of the vertically arranged double-electrodes resonator presented in this work can be defined by photolithography by controlling the width of the silicon layer. The k t 2 of the vertically arranged double-electrodes resonator calculated from the measurement results of admittance versus frequency by numerically fitting with the Butterworth Van Dyke model shows an increase by 3.85 times, from 0.073% to 0.281% compared with conventional TFE resonators, and the FOM also increases by three times, from 2.66 to 7.99. This work provides a new structure to design future AlN Lamb-wave resonators on SOI substrate.