Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in Mn 3 Mn 1− x Pd x N thin films

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Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 51; no. 5; p. 55303
Main Authors Xu, T, Ji, G P, Cao, Z X, Ji, A L
Format Journal Article
LanguageEnglish
Published 07.02.2018
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ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aaa258