Comparison of the trap behavior between ZrO 2 and HfO 2 gate stack nMOSFETs by 1/f noise and random telegraph noise
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Published in | IEEE electron device letters Vol. 34; no. 2; pp. 151 - 153 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.02.2013
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Online Access | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/LED.2012.2226698 |