Charge Trapping Layer Enabled Normally-Off β -Ga 2 O 3 MOSFET
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Published in | IEEE transactions on electron devices Vol. 70; no. 6; pp. 3191 - 3195 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.06.2023
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Online Access | Get full text |
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ISSN: | 0018-9383 1557-9646 |
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DOI: | 10.1109/TED.2023.3267758 |