A 146- $hbox mm^2$ 8-Gb Multi-Level NAND Flash Memory With 70-nm CMOS Technology

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 41; no. 1; pp. 161 - 169
Main Authors Hara, T., Fukuda, K., Kanazawa, K., Shibata, N., Hosono, K., Maejima, H., Nakagawa, M., Abe, T., Kojima, M., Fujiu, M., Takeuchi, Y., Amemiya, K., Morooka, M., Kamei, T., Nasu, H., Wang, C.-M., Sakurai, K., Tokiwa, N., Waki, H., Maruyama, T., Yoshikawa, S., Higashitani, M., Pham, T.D., Fong, Y., Watanabe, T.
Format Journal Article
LanguageEnglish
Published 01.01.2006
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ISSN:0018-9200
DOI:10.1109/JSSC.2005.859027