n-type SnS 2 thin films spray-coated from transparent molecular ink as a non-toxic buffer layer for solar photovoltaics

Abstract This paper reports the effect of solvent evaporation temperature on spray-coated tin disulfide (SnS 2 ) thin films from molecular ink. Thiourea and tin chloride were the key chemical reagents used for the synthesis of SnS 2 transparent ink under atmospheric conditions. The structural and co...

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Bibliographic Details
Published inPhysica scripta Vol. 97; no. 9; p. 95810
Main Authors Tair, Sabrina, Ghediya, Prashant R, Ech-Chergui, Abdelkader Nebatti, Guezzoul, M’hamed, Mukherjee, Sanat Kumar, Driss-Khodja, Kouider, Singh, Rajan, Ray, Jaymin, Amrani, Bouhalouane
Format Journal Article
LanguageEnglish
Published 01.09.2022
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Summary:Abstract This paper reports the effect of solvent evaporation temperature on spray-coated tin disulfide (SnS 2 ) thin films from molecular ink. Thiourea and tin chloride were the key chemical reagents used for the synthesis of SnS 2 transparent ink under atmospheric conditions. The structural and compositional properties of SnS 2 thin films revealed formation of pristine hexagonal SnS 2 . The films are smooth, homogeneous resulting in band gaps ranging from 2 to 2.22 eV suited for a Cd-free alternative buffer layer for Cu-based multicomponent solar cells. Thermoelectric power measurement showed that tin disulfide films exhibit n-type conductivity. Activation energy estimated from temperature variation of electrical conductivity measurement varied from 40 to 90 mV. Our results suggest that ink-processed SnS 2 can be used as a potential alternative for opto-electronic devices such as thin film solar cell and photodetector devices.
ISSN:0031-8949
1402-4896
DOI:10.1088/1402-4896/ac8776