Enhanced Performance of Low-Leakage-Current Normally off p-GaN Gate HEMTs Using NH 3 Plasma Pretreatment

Saved in:
Bibliographic Details
Published inIEEE transactions on electron devices Vol. 70; no. 9; pp. 4560 - 4564
Main Authors Wu, Nengtao, Luo, Ling, Xing, Zhiheng, Li, Shanjie, Zeng, Fanyi, Cao, Ben, Wu, Changtong, Li, Guoqiang
Format Journal Article
LanguageEnglish
Published 01.09.2023
Online AccessGet full text

Cover

More Information
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3294894