Effect of Dopant Activation and Plasmon Damping on Carrier Polarization in In 2 O 3 Nanocrystals

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Bibliographic Details
Published inJournal of physical chemistry. C Vol. 123; no. 49; pp. 29829 - 29837
Main Authors Yin, Penghui, Tan, Yi, Ward, Matthew J., Hegde, Manu, Radovanovic, Pavle V.
Format Journal Article
LanguageEnglish
Published 12.12.2019
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