Effect of Dopant Activation and Plasmon Damping on Carrier Polarization in In 2 O 3 Nanocrystals

Saved in:
Bibliographic Details
Published inJournal of physical chemistry. C Vol. 123; no. 49; pp. 29829 - 29837
Main Authors Yin, Penghui, Tan, Yi, Ward, Matthew J., Hegde, Manu, Radovanovic, Pavle V.
Format Journal Article
LanguageEnglish
Published 12.12.2019
Online AccessGet full text

Cover

More Information
ISSN:1932-7447
1932-7455
DOI:10.1021/acs.jpcc.9b07633