Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS 2 Channel Directly Grown on SiO$_{{x}}$ /Si Substrates Using Area-Selective CVD Technology
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Published in | IEEE transactions on electron devices Vol. 66; no. 12; pp. 5381 - 5386 |
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Main Authors | , , , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.12.2019
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Online Access | Get full text |
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ISSN: | 0018-9383 1557-9646 |
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DOI: | 10.1109/TED.2019.2946101 |