PBTI Investigation of MoS 2 n-MOSFET With Al 2 O 3 Gate Dielectric
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Published in | IEEE electron device letters Vol. 38; no. 5; pp. 677 - 680 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.05.2017
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Online Access | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/LED.2017.2679221 |