Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO 2 -Based Gate Dielectrics
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Published in | IEEE electron device letters Vol. 37; no. 4; pp. 359 - 362 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.04.2016
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Online Access | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/LED.2016.2535900 |