Positive-Bias Temperature Instability Improvement of Poly-Si Thin-Film Transistor With HfO 2 Gate Dielectric by Ammonia Plasma Treatment
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Published in | IEEE transactions on plasma science Vol. 44; no. 12; pp. 3153 - 3157 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
01.12.2016
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Online Access | Get full text |
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ISSN: | 0093-3813 1939-9375 |
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DOI: | 10.1109/TPS.2016.2602380 |