Positive-Bias Temperature Instability Improvement of Poly-Si Thin-Film Transistor With HfO 2 Gate Dielectric by Ammonia Plasma Treatment

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Bibliographic Details
Published inIEEE transactions on plasma science Vol. 44; no. 12; pp. 3153 - 3157
Main Authors Ma, William Cheng-Yu, Lin, Zheng-Yi, Huang, Yao-Sheng, Huang, Bo-Siang, Wu, Zheng-Da
Format Journal Article
LanguageEnglish
Published 01.12.2016
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ISSN:0093-3813
1939-9375
DOI:10.1109/TPS.2016.2602380