Correction to "Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells"

In the original article by B. Kim (see ibid., vol. 53, no. 12, p. 3012-3019, Dec. 2006) the biography for Dr. Kinam Kim was out of date. A more current one is given.

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 54; no. 4; p. 893
Main Authors Bomsoo Kim, Wook-Hyun Kwon, Chang-Ki Baek, Younghwan Son, Chan-Kwang Park, Kinam Kim, Kim, D.M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2007
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:In the original article by B. Kim (see ibid., vol. 53, no. 12, p. 3012-3019, Dec. 2006) the biography for Dr. Kinam Kim was out of date. A more current one is given.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.890466