Reliable BiI 3 -Based Resistive Random-Access Memory Devices with a High On/Off Ratio

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Bibliographic Details
Published inACS applied electronic materials Vol. 5; no. 1; pp. 255 - 264
Main Authors Chen, Mei-Hsin, Lin, Po-Feng, Chen, Bo-You, Cheng, Ju-Feng
Format Journal Article
LanguageEnglish
Published 24.01.2023
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ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.2c01316