Achieving Low Doped (<10 16 ) GaN with Large Breakdown Voltages (~1000 V)

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Bibliographic Details
Published inMeeting abstracts (Electrochemical Society) Vol. MA2012-02; no. 30; p. 2552
Main Authors Jones, Kenneth A., Tompkins, Randy P., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Metzger, R., Leach, Jacob, Suvana, Puneet, Tungare, Mihir, Shahedipou-Sandvik, Fatemeh
Format Journal Article
LanguageEnglish
Published 04.06.2012
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ISSN:2151-2043
2151-2035
DOI:10.1149/MA2012-02/30/2552