The Use of LEXES to Measure the Chemical Composition of In Situ Doped Epitaxial SiGe and SiC for High Performance CMOS Technology

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Bibliographic Details
Published inMeeting abstracts (Electrochemical Society) Vol. MA2010-02; no. 30; p. 1961
Main Authors Moret, Mona P., Francois-Saint-Cyr, Hugues, Hombourger, Chrystel, Holt, Judson, Zhu, Frank, Ronsheim, Paul, Shneyder, Dmitriy, Snoeyenbos, David, Schuhmacher, Michel
Format Journal Article
LanguageEnglish
Published 08.07.2010
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ISSN:2151-2043
2151-2035
DOI:10.1149/MA2010-02/30/1961