Thickness Dependent Electrical Characteristics of InAlN/GaN-On-Si MOSHEMTs with Y 2 O 3 Gate Dielectric and Au-Free Ohmic Contact

Thickness dependent electrical properties of Y 2 O 3 gate dielectric based metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on In 0.18 Al 0.82 N/GaN-on-Si are reported. A Au-free Ti/Al/Ni/W (25/200/40/50 nm) ohmic contact compatible for Si fab industry has been developed, whic...

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Bibliographic Details
Published inECS transactions Vol. 53; no. 2; pp. 65 - 74
Main Authors Bera, Milan Kumar, Liu, Yi, Kyaw, Lwin Min, Ngoo, Yi Jie, Chor, Eng Fong
Format Journal Article
LanguageEnglish
Published 03.05.2013
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Summary:Thickness dependent electrical properties of Y 2 O 3 gate dielectric based metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on In 0.18 Al 0.82 N/GaN-on-Si are reported. A Au-free Ti/Al/Ni/W (25/200/40/50 nm) ohmic contact compatible for Si fab industry has been developed, which demonstrates a contact resistance of 0.56 Ω.mm and a specific contact resistivity of 1.45×10 -6 Ω.cm 2 , obtained after annealing at 900 o C in vacuum for 60 sec. A positive shift in threshold voltage with decreasing Y 2 O 3 film thickness is demonstrated while an improved MOSHEMTs transconductance and maximum saturation drain current have been obtained for thicker one. Besides, Y 2 O 3 film thickness and annealing dependent interfacial properties have been investigated.
ISSN:1938-5862
1938-6737
DOI:10.1149/05302.0065ecst