Hydrogen Interaction with HfO 2 Films Deposited on Ge(100) and Si(100)

In the present work we investigated the thermally-driven hydrogen incorporation in HfO2 films deposited on Si and Ge substrates. Two incorporation regimes were identified, one in the 200-400ºC temperature range and another one in the 400-600ºC temperature range. D incorporation was higher for films...

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Bibliographic Details
Published inECS transactions Vol. 50; no. 4; pp. 97 - 103
Main Authors Soares, Gabriel Vieira, Feijó, Taís, Baumvol, Israel J.R., Aguzzoli, Cesar, Krug, Cristiano, Radtke, Cláudio
Format Journal Article
LanguageEnglish
Published 15.03.2013
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Summary:In the present work we investigated the thermally-driven hydrogen incorporation in HfO2 films deposited on Si and Ge substrates. Two incorporation regimes were identified, one in the 200-400ºC temperature range and another one in the 400-600ºC temperature range. D incorporation was higher for films deposited on Si for all investigated temperatures, indicating a higher density of sites for D incorporation, probably near the HfO2/Si interface. HfO2 films undergo structural changes during annealing in the high temperature regime, crystallizing in the monoclinic and in the cubic phase. No oxygen or hafnium desorption were observed after annealings, as well as no Ge incorporation in the HfO2 film.
ISSN:1938-5862
1938-6737
DOI:10.1149/05004.0097ecst