Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layers on 200 mm Ge Virtual Substrates: Impact of Growth Pressure, HCl and Si 2 H 6 Flows

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Bibliographic Details
Published inECS transactions Vol. 86; no. 7; pp. 207 - 218
Main Authors Khazaka, Rami, Aubin, Joris, Nolot, Emmanuel, Hartmann, Jean-Michel
Format Journal Article
LanguageEnglish
Published 20.07.2018
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ISSN:1938-6737
1938-5862
DOI:10.1149/08607.0207ecst