High Quality SiO 2 Obtained From Diluted SOG for Low Temperature TFT Fabrication Process

• Published in: ECS transactions Vol. 49; no. 1; pp. 399 - 405
• Main Authors: Dominguez J., Miguel A., Jacome, Alfonso Torres, Quintero, Pedro Rosales, Reyes Betanzo, Claudia
• Format: Journal Article
• Language: English
• Published: 30.08.2012
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/04901.0399ecst

Currently, the flexible electronics research field is of high interest because of the development of low cost products, such as solar cells and LCDs. Low temperature deposition processes are required in order to use flexible substrates. Nevertheless, the performance of the electronic devices built at temperatures below 350°C is not as good as in CMOS technology. Thus, physical and electrical properties of semiconductor and insulator materials deposited at these low temperatures must be improved. In this work, characterization of SiO 2 annealed at 200°C obtained from diluted Spin On Glass (SOG) is presented. The optical and electrical characterization showed that the refractive index ( n ) and dielectric constant ( k ) values are similar to those of thermally grown SiO 2 . TFTs based on a-SiGe:H were fabricated to demonstrate the quality of the dielectric here obtained