Effect of (GaN/AlN) alternating‐source‐feeding buffer layer in GaN growth on Al 2 O 3 and silicon by RF‐MBE

Abstract Effect of (GaN/AlN) alternating‐source‐feeding (ASF) buffer layer was investigated in the growth of GaN on Al 2 O 3 and Si substrates by radio‐frequency plasma‐assisted molecular beam epitaxy (RF‐MBE). The formation process of ASF buffer layer was different between the cases on Al 2 O 3 and...

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Published inPhysica status solidi. C Vol. 10; no. 11; pp. 1549 - 1552
Main Authors Yamaguchi, Tomohiro, Tajimi, Daiki, Hayashi, Masato, Igaki, Tatsuhiro, Sugiura, Yohei, Honda, Tohru
Format Journal Article
LanguageEnglish
Published 01.11.2013
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Summary:Abstract Effect of (GaN/AlN) alternating‐source‐feeding (ASF) buffer layer was investigated in the growth of GaN on Al 2 O 3 and Si substrates by radio‐frequency plasma‐assisted molecular beam epitaxy (RF‐MBE). The formation process of ASF buffer layer was different between the cases on Al 2 O 3 and Si substrates. Nevertheless, GaN films with two‐dimensional surface were obtained on both ASF buffer layers on Al 2 O 3 and Si substrates. The residual strain of GaN films was changed by changing the growth condition of the ASF buffer layers. Without any selection of substrates, it is expected to achieve the precisely controlled strain state of GaN films by adjusting the structure of the ASF buffer layer. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201300399