Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

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Bibliographic Details
Published inACS applied materials & interfaces Vol. 14; no. 45; pp. 51137 - 51148
Main Authors Toprasertpong, Kasidit, Tahara, Kento, Hikosaka, Yukinobu, Nakamura, Ko, Saito, Hitoshi, Takenaka, Mitsuru, Takagi, Shinichi
Format Journal Article
LanguageEnglish
Published 16.11.2022
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ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.2c15369