Low‐Temperature Atomic Layer Deposition of MoS 2 Films

Abstract Wet chemical screening reveals the very high reactivity of Mo(NMe 2 ) 4 with H 2 S for the low‐temperature synthesis of MoS 2 . This observation motivated an investigation of Mo(NMe 2 ) 4 as a volatile precursor for the atomic layer deposition (ALD) of MoS 2 thin films. Herein we report tha...

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Published inAngewandte Chemie Vol. 129; no. 18; pp. 5073 - 5077
Main Authors Jurca, Titel, Moody, Michael J., Henning, Alex, Emery, Jonathan D., Wang, Binghao, Tan, Jeffrey M., Lohr, Tracy L., Lauhon, Lincoln J., Marks, Tobin J.
Format Journal Article
LanguageEnglish
Published 24.04.2017
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Summary:Abstract Wet chemical screening reveals the very high reactivity of Mo(NMe 2 ) 4 with H 2 S for the low‐temperature synthesis of MoS 2 . This observation motivated an investigation of Mo(NMe 2 ) 4 as a volatile precursor for the atomic layer deposition (ALD) of MoS 2 thin films. Herein we report that Mo(NMe 2 ) 4 enables MoS 2 film growth at record low temperatures—as low as 60 °C. The as‐deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift‐off patterning for the straightforward fabrication of diverse device structures.
ISSN:0044-8249
1521-3757
DOI:10.1002/ange.201611838