Silicon Oxide enhanced Schottky gate In 0.53 Ga 0.47 As FET's with a self-aligned recessed gate structure

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Bibliographic Details
Published inIEEE electron device letters Vol. 5; no. 12; pp. 511 - 514
Main Authors Cheng, C.L., Liao, A.S.H., Chang, T.Y., Caridi, E.A., Coldren, L.A., Lalevic, B.
Format Journal Article
LanguageEnglish
Published 01.12.1984
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ISSN:0741-3106
DOI:10.1109/EDL.1984.26008