Improvements of MOVPE grown (11$ \bar 2 $2) oriented GaN on pre‐structured sapphire substrates using a SiN x interlayer and HVPE overgrowth

Abstract In this article two methods for improvements of (11 $ \bar 2 $ 2) oriented semipolar GaN grown by MOVPE on prestructured sapphire substrates are investigated. The integration of a SiN x interlayer helps to obtain a better crystal quality. Also the overgrowth of the MOVPE samples by HVPE is...

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Published inPhysica status solidi. C Vol. 11; no. 3-4; pp. 525 - 529
Main Authors Caliebe, Marian, Meisch, Tobias, Neuschl, Benjamin, Bauer, Sebastian, Helbing, Jeffrey, Beck, Dominik, Thonke, Klaus, Klein, Martin, Heinz, Dominik, Scholz, Ferdinand
Format Journal Article
LanguageEnglish
Published 01.02.2014
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Summary:Abstract In this article two methods for improvements of (11 $ \bar 2 $ 2) oriented semipolar GaN grown by MOVPE on prestructured sapphire substrates are investigated. The integration of a SiN x interlayer helps to obtain a better crystal quality. Also the overgrowth of the MOVPE samples by HVPE is a way to obtain a smoother GaN surface. A high incorporation of oxygen on (11‐22) oriented GaN compared to (0001) oriented GaN grown by HVPE was observed. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201300527