Ultrathin Al‐Assisted Al 2 O 3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter (Adv. Electron. Mater. 4/2022)

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Bibliographic Details
Published inAdvanced electronic materials Vol. 8; no. 4
Main Authors Cho, Haewon, Pujar, Pavan, Cho, Yong In, Hong, Seongin, Kim, Sunkook
Format Journal Article
LanguageEnglish
Published 01.04.2022
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ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.202270017