Non-Stoichiometry and Defect Structure of CuInSe 2
The precise determination of unit cell parameters of polycrystalline Cu 1- y In 1+ y Se 2 alloys with variable cation ratio ([Cu]/[In] = 1.01-0.90) and fixed Se content (50.0 at.%) and Cu 1-z In 1-z Se 2(1+z) alloys under Se deficit and excess relative to the stoichiometric composition and fixed cat...
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Published in | Japanese Journal of Applied Physics Vol. 39; no. S1; p. 397 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
01.01.2000
|
Online Access | Get full text |
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Summary: | The precise determination of unit cell parameters of polycrystalline Cu
1-
y
In
1+
y
Se
2
alloys with variable cation ratio ([Cu]/[In] = 1.01-0.90) and fixed Se content (50.0 at.%) and Cu
1-z
In
1-z
Se
2(1+z)
alloys under Se deficit and excess relative to the stoichiometric composition and fixed cation ratio ([Cu]/[In] = 1.0) was performed. The conclusions about the predominant types of defects were made. Increase in lattice parameters under deviation from stoichiometry in the Cu
1-
y
In
1+
y
Se
2
alloys to the In excess side is attributed to the appearance of substitution defects In
Cu
. A minimum at z ∼ 0.01 (∼ 50.5 at.% Se) in the concentration dependences of unit cell parameters of the Cu
1-z
In
1-z
Se
2(1+z)
alloys is explained by the change in the defect formation mechanism in the vicinity of this composition caused by defect interactions. The growth in unit cell parameters observed under Cu excess in the Cu
1-
y
In
1+
y
Se
2
alloys and under Se deficit in the Cu
1-z
In
1+z
Se
2(1+z)
alloys is attributed to the formation of Cu interstitial atoms. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAPS.39S1.397 |