Studying the effects of siloxane poisoning on a SnO 2 metal oxide semiconductor gas sensor in temperature cycled operation enabling self-monitoring and self-compensation

Abstract This work studies poisoning by the cyclic siloxane octamethylcyclotetrasiloxane on a commercially available semiconductor gas sensor in TCO (temperature cycled operation). The data is evaluated using the Sauerwald-Baur model and the DSR method (differential surface reduction). The sensitivi...

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Bibliographic Details
Published inTechnisches Messen Vol. 90; no. 11; pp. 691 - 702
Main Authors Schultealbert, Caroline, Baur, Tobias, Sauerwald, Tilman, Schütze, Andreas
Format Journal Article
LanguageEnglish
Published 26.11.2023
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Summary:Abstract This work studies poisoning by the cyclic siloxane octamethylcyclotetrasiloxane on a commercially available semiconductor gas sensor in TCO (temperature cycled operation). The data is evaluated using the Sauerwald-Baur model and the DSR method (differential surface reduction). The sensitivity towards several gases (volatile organic compounds, hydrogen and carbon monoxide) is evaluated and compared with a sensor in constant temperature operation mode. The physical and chemical processes on the sensitive layer as well as the resulting selectivity towards hydrogen are discussed. A feature is identified that can be derived from the Sauerwald-Baur model (the differential surface oxidation, DSO) and that quantitatively expresses the sensor condition regarding siloxane poisoning. With the help of this feature, a self-compensation of the sensor signal is demonstrated.
ISSN:0171-8096
2196-7113
DOI:10.1515/teme-2023-0065