Low‐Power Nonvolatile Charge Storage Memory Based on MoS 2 and an Ultrathin Polymer Tunneling Dielectric

• Published in: Advanced functional materials Vol. 27; no. 43
• Main Authors: Woo, Myung Hun, Jang, Byung Chul, Choi, Junhwan, Lee, Khang June, Shin, Gwang Hyuk, Seong, Hyejeong, Im, Sung Gap, Choi, Sung‐Yool
• Format: Journal Article
• Language: English
• Published: 01.11.2017
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.201703545

Abstract Low‐power, nonvolatile memory is an essential electronic component to store and process the unprecedented data flood arising from the oncoming Internet of Things era. Molybdenum disulfide (MoS 2 ) is a 2D material that is increasingly regarded as a promising semiconductor material in electronic device applications because of its unique physical characteristics. However, dielectric formation of an ultrathin low‐ k tunneling on the dangling bond‐free surface of MoS 2 is a challenging task. Here, MoS 2 ‐based low‐power nonvolatile charge storage memory devices are reported with a poly(1,3,5‐trimethyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) tunneling dielectric layer formed via a solvent‐free initiated chemical vapor deposition (iCVD) process. The surface‐growing polymerization and low‐temperature nature of the iCVD process enable the conformal growing of low‐ k (≈2.2) pV3D3 insulating films on MoS 2 . The fabricated memory devices exhibit a tunable memory window with high on/off ratio (≈10 6 ), excellent retention times of 10 5 s with an extrapolated time of possibly years, and an excellent cycling endurance of more than 10 3 cycles, which are much higher than those reported previously for MoS 2 ‐based memory devices. By leveraging the inherent flexibility of both MoS 2 and polymer dielectric films, this research presents an important milestone in the development of low‐power flexible nonvolatile memory devices.