Low Power and Improved Switching Properties of Selector-Less Ta 2 O 5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode

The effects of TiN top electrode composition (TiN vs Ti-rich TiN) on the resistive switching characteristics of selector-less TiN/TiO x /Ta 2 O 5 /TiN resistive random access memory (ReRAM) are investigated. Ti-rich TiN enables TiO x to have a higher concentration of oxygen vacancy and reduce barrie...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 52; no. 4S; p. 4
Main Authors Kim, Beomyong, Kim, Wangee, Kim, Hyojune, Jung, Kyooho, Park, Wooyoung, Seo, Bomin, Joo, Moonsig, Lee, Keejeung, Hong, Kwon, Park, Sungki
Format Journal Article
LanguageEnglish
Published 01.04.2013
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Summary:The effects of TiN top electrode composition (TiN vs Ti-rich TiN) on the resistive switching characteristics of selector-less TiN/TiO x /Ta 2 O 5 /TiN resistive random access memory (ReRAM) are investigated. Ti-rich TiN enables TiO x to have a higher concentration of oxygen vacancy and reduce barrier height between top electrode and TiO x . This leads to higher on/off current ratio and lower operation voltage without degradation of non-linearity which is the important factor for selector-less type ReRAM, compared to the stoichiometric TiN resistor stack. Consequently, it is verified that the switching mechanism is hybrid combination of filament formation and redox reaction in switching operation. This work is applicable to both high density and cost-effective ReRAM.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.04CD05