Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Nitrided Gate Oxide

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 50; no. 10S; p. 10
Main Authors Han, In-Shik, Kwon, Hyuk-Min, Bok, Jung-Deuk, Kwon, Sung-Kyu, Jung, Yi-Jung, Choi, Woon-il, Choi, Deuk-Sung, Lim, Min-Gyu, Chung, Yi-Sun, Lee, Jung-Hwan, Lee, Ga-Won, Lee, Hi-Deok
Format Journal Article
LanguageEnglish
Published 01.10.2011
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.50.10PB03