Wet Etching of Amorphous TiO 2 Thin Films Using H 3 PO 4 –H 2 O 2 Aqueous Solution
We report on the wet etching of amorphous undoped and Nb-doped TiO 2 thin films using H 3 PO 4 –H 2 O 2 etching solution. The etching rate ( R ) showed a maximum at a H 3 PO 4 concentration of approximately 50 wt % at 80 °C, suggesting that H 2 PO 4 - and/or H 3 O + is responsible for the etching re...
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| Published in | Japanese Journal of Applied Physics Vol. 52; no. 9R; p. 98002 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
01.09.2013
|
| Online Access | Get full text |
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| Summary: | We report on the wet etching of amorphous undoped and Nb-doped TiO
2
thin films using H
3
PO
4
–H
2
O
2
etching solution. The etching rate (
R
) showed a maximum at a H
3
PO
4
concentration of approximately 50 wt % at 80 °C, suggesting that H
2
PO
4
-
and/or H
3
O
+
is responsible for the etching reaction. The addition of H
2
O
2
to H
3
PO
4
solution significantly enhanced
R
, and an optimized solution exhibited an
R
of 13 nm/min at 80 °C, which is one order of magnitude higher than that using H
2
SO
4
. These results demonstrate that H
3
PO
4
–H
2
O
2
aqueous solution is an effective etchant for TiO
2
-based amorphous thin films. |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.7567/JJAP.52.098002 |