Charge Separation in Epitaxial SnS/MoS 2 Vertical Heterojunctions Grown by Low-Temperature Pulsed MOCVD
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Published in | ACS applied materials & interfaces Vol. 11; no. 43; pp. 40543 - 40550 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
30.10.2019
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Online Access | Get full text |
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ISSN: | 1944-8244 1944-8252 |
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DOI: | 10.1021/acsami.9b14412 |