Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO 2 interface

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Bibliographic Details
Published inApplied physics express Vol. 11; no. 3; p. 31002
Main Authors Chokawa, Kenta, Narita, Tetsuo, Kikuta, Daigo, Kachi, Tetsu, Shiozaki, Koji, Shiraishi, Kenji
Format Journal Article
LanguageEnglish
Published 01.03.2018
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ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.11.031002