Source/Drain Engineering for In 0.7 Ga 0.3 As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 50; no. 4S; p. 4
Main Authors Gong, Xiao, Chin, Hock-Chun, Koh, Shao-Ming, Wang, Lanxiang, Zhu, Ivana, Wang, Benzhong, Chia, Ching Kean, Yeo, Yee-Chia
Format Journal Article
LanguageEnglish
Published 01.04.2011
Online AccessGet full text

Cover

More Information
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.50.04DF01