Multibit, Lead‐Free Cs 2 SnI 6 Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application

• Published in: Advanced functional materials Vol. 34; no. 16
• Main Authors: Kumar, Ajit, Krishnaiah, Mokurala, Park, Jinwoo, Mishra, Dhananjay, Dash, Bidyashakti, Jo, Hyeon‐Bin, Lee, Geun, Youn, Sangwook, Kim, Hyungjin, Jin, Sung Hun
• Format: Journal Article
• Language: English
• Published: 01.04.2024
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.202310780

Abstract In the realm of neuromorphic computing, integrating Binary Neural Networks (BNN) with non‐volatile memory based on emerging materials can be a promising avenue for introducing novel functionalities. This study underscores the viability of lead‐free, air‐stable Cs 2 SnI 6 (CSI) based resistive random access memory (RRAM) devices as synaptic weights in neuromorphic architectures, specifically for BNNs applications. Herein, hydrothermally synthesized CSI perovskites are explored as a resistive layer in RRAM devices either on the rigid or flexible substrate, highlighting reproducible multibit switching with self‐compliance, low‐ resistance‐state (LRS) variations, a decent On/Off ratio(or retention) of ≈10 3 (or 10 4  s), and endurance exceeding 300 cycles. Moreover, a comprehensive evaluation with the 32 × 32 × 3 RGB CIFAR‐10 dataset reveals that binary convolutional neural networks (BCNN) trained solely on binary weight values can achieve competitive rates of accuracy comparable to those of their analog weight counterparts. These findings highlight the dominance of the LRS for CSI RRAM with self‐compliance in a weighted configuration and minimal influence of the high resistance state despite substantial fluctuations for flexible CSI RRAM under varying bending radii. With its unique electrical switching capabilities, the CSI RRAM is highly anticipated to emerge as a promising candidate for embedded AI systems, especially in IoT devices and wearables.